LS421-6 [Linear Systems]
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET; 低漏低漂移整体式双N沟道JFET型号: | LS421-6 |
厂家: | Linear Systems |
描述: | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
文件: | 总2页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LS421, LS422, LS423,
LS424, LS425, LS426
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
IG=0.25pA MAX
gfs=120µmho MIN
LOW POWER OPERATION
VGS(off)=2V MAX
ABSOLUTE MAXIMUM RATINGS NOTE 1
S1
G2
C
4
@ 25°C (unless otherwise noted)
G1
S2
3
5
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
D1
D1
D2
2
6
Maximum Voltage and Current for Each Transistor NOTE 1
D2
1
7
S1
G2
-VGSS
-VDSO
-IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
40V
TO-78
BOTTOM VIEW
40V
G1
S2
10mA
22 X 20 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
|∆VGS1-2 /∆T| max. Drift vs. Temperature
10
10
2.0
25
15
2.0
40
25
2.0
10
10
3.0
25
15
40
25
µV/°C
mV
V
VDG= 10V ID= 30µA
TA=-55°C to +125°C
VDG=10V ID= 30µA
|VGS1-2| max.
VGS(off)
Offset Voltage
GATE VOLTAGE
Pinchoff Voltage
3.0
2.9
3.0
2.9
VDS=10V
ID= 1nA
VGS
Operating Range
Operating
1.8
.25
250
1.0
1.0
1.8
.25
250
1.0
1.0
1.8
.25
250
1.0
1.0
2.9
V
pA
pA
pA
nA
VDG=10V
VDG=10V
TA= +125°C
VDS= 0V
ID= 30µA
ID= 30µA
IGmax.
.500
500
3.0
.500 .500
-IGmax.
-IGSSmax.
-IGSSmax.
High Temperature
At Full Conduction
High Temperature
500
3.0
3.0
500
3.0
3.0
VGS= 20V
3.0
TA= +125°C
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
MIN.
40
TYP.
60
MAX.
UNITS
CONDITIONS
VDS= 0
--
--
V
V
IG= 1nA
ID= 0
BVGGO
Gate-to-Gate Breakdown
40
--
IG= 1µA
IS= 0
TRANSCONDUCTANCE
Yfss
Yfs
Full Conduction
300
120
--
1500
350
µmho VDS= 10V
µmho VDG= 10V
VGS= 0
f= 1kHz
f= 1kHz
Typical Operation
DRAIN CURRENT
Full Conduction
200
ID= 30µA
60
60
--
--
1000
1800
µA
µA
LS421-3
LS424-6
VDS= 10V VGS= 0
IDSS
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
OUTPUT CONDUCTANCE
YOSS
YOS
Full Conduction
Operating
--
--
--
10
µmho
µmho
VDS= 10V
VDG= 10V
VGS= 0
0.1
3.0
ID= 30µA
COMMON MODE REJECTION
CMR
CMR
-20 log |∆VGS1-2/∆VDS
|
--
--
90
90
--
--
dB
dB
∆VDS= 10 to 20V
∆VDS= 5 to 10V
ID= 30µA
ID= 30µA
-20 log |∆VGS1-2/∆VDS
|
NOISE
NF
en
Figure
--
--
--
1.0
70
dB
V
DG= 10V
ID= 30µA RG= 10MΩ
f= 10Hz
Voltage
20
10
nV/√Hz VDG= 10V
ID= 30µA f= 10Hz
ID= 30µA f= 1kHz
VDG= 10V
CAPACITANCE
CISS
Input
--
--
--
--
3.0
1.5
pF
pF
VDS= 10V
VDS= 10V
VGS= 0 f= 1MHz
VGS= 0 f= 1MHz
CRSS
Reverse Transfer
P-DIP
TO-71
TO-78
(8.13)
(7.37)
0.320
0.290
Six Lead
0.335
0.370
0.230
0.209
DIA.
0.195
0.175
0.305
0.335
DIA.
S1 1
G2
SS
8
7
0.405
(10.29)
MAX.
MAX.
0.030
MAX.
0.150
0.115
0.165
0.185
0.040
D1 2
SS 3
G1 4
0.016
0.019
DIM. A
6 D2
5 S2
MIN. 0.500
6 LEADS
0.019
0.016
0.500 MIN.
0.050
0.016
0.021
DIM. B
SEATING
PLANE
DIA.
0.200
0.100
0.100
0.029
0.045
SOIC
3
7
3
7
2
1
8
4
5
6
2
4
0.150 (3.81)
0.158 (4.01)
1
8
5
6
0.100
1
8
7
6
5
N/C
S1
45°
45°
D1
G1
2
0.188
0.197
G2
(4.78)
(5.00)
D2
3
0.046
0.036
0.048
0.028
0.028
0.034
N/C
S2
4
(5.79)
0.228
(6.20)
0.244
S1
D1
G1
N/C
G2
D2
S2
N/C
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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